Reactive Ion Etching

Reactive Ion Etching and deposition
Oxford Instrument, Plasma Pro NGP 80

Reactive Ion Etching (RIE) is a simple operation, and an economical solution for general plasma etching. The substrate is usually placed on a quartz or graphite “coverplate” to avoid sputtering/re-deposition of electrode material and gas is injected into process chamber via “showerhead” gas inlet in the top electrode. Negative self-bias forms on lower electrode and a single RF plasma source determines both ion density and energy.

PlasmaPro NGP80 offers versatile plasma etch and deposition solutions on one platform with convenient open loading.

		Main instrumental features: Double gas inlet Etching of several materials (Compound Semiconductors Dielectrics, Metals, Organics) Up to 200mm wafers Failure analysis dry etch de-processing using the specially-configured PlasmaPro NGP FA tools, with RIE, dual-mode RIE/PE and ICP processes ranging from packaged chip and die etch through to full 200mm wafer etch High quality PECVD of silicon nitride and silicon dioxide for photonics, dielectric layers, passivation and many other uses Hard mask deposition and etch for high brightness LED production