Inductively Coupled Plasma Etching (ICP RIE)
Inductively Coupled Plasma and Reactive Ion Etching (ICP RIE)
Oxford Instrument, Plasma Pro NGP 80
Reactive Ion Etching (RIE) is a simple operation, and an economical solution for general plasma etching. The substrate is placed on a graphite “coverplate” to avoid sputtering/re-deposition of electrode material and gas is injected into process chamber via “showerhead” gas inlet in the top electrode. Negative self-bias forms on lower electrode and a single RF plasma source determines both ion density and energy.